The film is not attacked by any chemicals which attack aluminium or y-alumina, viz. HF, HCI, H2SOq, H3POq or NaOH of any concentration, and is easily separated from the …
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Red Chrome Corundum Bricks. 2、Green Coloration: At higher concentrations (generally above 8% Cr₂O₃), chromium can form various compounds with alumina, such as eskolaite (Cr₂O₃) or mixed ...
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Corundum-structured α-In2O3 was grown by mist chemical vapor deposition (CVD) on sapphire substrates with the use of α-Ga2O3 buffer layers. The use of ozone (O3) and thermal annealing in air were effective for improved surface morphology and electrical properties of the α-In2O3 layer. MOSFETs were fabricated using the α-In2O3 layer, …
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The results show that a more uniform passive film with the main composition of corundum oxides γ-Fe 2 O 3 and oxyhydroxide γ-FeOOH formed on the wear scar under higher DO concentration, which hindered the charge transfer and improved corrosion resistance. The passive film modifies contact pressure and changes wear behavior, …
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The demand for high-efficient and robust power semiconductors in harsh environments such as high temperature and high voltage has been enlarged with the fast development of the industry. Gallium oxide (Ga2O3) with a larger bandgap energy of 4.8–5.3 eV than Si, SiC, and GaN is a promising material suitable for next-generation …
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It was found that corundum structures of the solid solutions could be grown on eskolaite up to a composition of (Al0.35Cr0.65)2O3. For higher Al concentrations, amorphous growth of the solid solutions was observed. The growth of pure alumina in corundum structures turned to amorphous after a few nanometers.
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Corundum structured VTiO 3 has been grown as epitaxial films on c-cut sapphire by laser molecular beam epitaxy.The properties of the film were characterized by reflection high energy electron diffraction, X-ray diffraction, transmission electron microscopy (TEM), and photoemission spectroscopy. All the structural probes clearly …
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The corundum mineral family stands as a titan in the world of gemstones, celebrated for its exceptional hardness and vibrant colours.This remarkable mineral family encompasses a range of prized …
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The current–voltage results from devices indicate that In2O3 film with 9% Ag concentration has better conduction film. Gas sensing performance was studied for NO2 gas with different concentration (50,100,150) ppm at operating temperature 100 °C. ... Gaoa L, Chengb Z, Xiangb Q, Zhangb Y, Xua J (2015) Porous corundum-type In 2 O 3 …
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A binder exhibiting low porosity and localization of the glass phase can ensure a 50–100 times reduction in the creep limit as compared to a material in which the binder mass has a low density and the corundum and mullite crystals are separated by thin films of glass. The total concentration of the glass phase, the Al 2 O 3 content in the ...
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Corundum forms under high-pressure and high-temperature conditions, typically in metamorphic or igneous rocks.It can also form in placer deposits, which are sedimentary deposits that contain minerals …
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Properties and mechanism of formation of α-alumina (Corundum) film by anodic oxidation of aluminium in bisulphate melts ... H 3 PO 4, NaOH etc. of any concentration. Coating ratio is 1·76–1·81, nearly equal to the theoretical value (1·89). The film is very stable and can neither be sealed by steaming nor dyed by water-soluble …
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Carrier concentration of Sn‐doped α‐Ga2O3 films is controlled in the range of 1017–1019 cm−3 by changing the Sn/Ga concentration ratio in source solution. α‐Ga2O3 films on m‐plane ...
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Different polymorphs of Ga 2 O 3 including α-, β-, and ε-Ga 2 O 3 have been grown by using this growth technique. 57,82,93,109,[126] [127] [128] Heteroepitaxial growth of α-Ga 2 O 3 thin films ...
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Surface electronic states and band bending behavior of the corundum In 2 O 3 (α-In 2 O 3), which is a metastable crystal polymorph, thin film grown by mist-chemical vapor deposition was investigated by combining hard and soft X-ray photoelectron spectroscopy (HAXPES and SXPES, respectively) by comparison with the bixbyite In 2 …
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Laser ablation-inductively coupled plasma-mass spectrometry (LA-ICP-MS) is now a robust method for measuring trace elements in gem-quality corundum (ruby and …
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Corundum is the crystalline form of aluminum oxide (Al2 O 3) and occurs naturally as an igneous and metamorphic mineral and is synthesized artificially by various high …
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Al–Cr–O–N thin films in corundum-type solid solutions in the α-(Al 1 − x,Cr x) 2 + δ(O 1 − y,N y) 3 phase and CrN-type solid solutions in the f.c.c.-(Al 1 − x,Cr x) 1 + θ(O 1 − y,N y) phase were deposited at non-equilibrium conditions by reactive r.f. magnetron sputtering at a substrate temperature of 500 °C without additional ...
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A pure α‐In2O3 film grown using a source precursor solution with 1.2 mol L−1 of HCl shows a residual electron concentration of 8.4 × 1017 cm−3 and electron Hall mobility of 216 cm2 V−1s ...
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Here we use corundum to present a comprehen-sive quantitative description of the causes of color in a gem material and illustrate its predictive power. Natural corundum has six …
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If corundum contains Si, Mg, and Fe, Si will pair with Mg before Fe. If corundum contains Si, Ti, Mg, and Fe, Si will pair with both Mg and Fe before Ti will. When the concentration of Mg exceeds the sum of both Si and Ti, the excess Mg will be charge compensated by trapped holes (see Emmett et al., 2003, p. 92) in oxidizing conditions, …
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Following the previous achievement of highly crystalline α-Ga2O3 thin films on c-plane sapphire, the growth of corundum-structured α-(AlxGa1-x)2O3 was examined aiming at the future application ...
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Researchers at the Gemological Association of All Japan found that laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) is an extremely effec- tive …
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The second period of corundum formation was the Pan-African orogeny (750–450 Ma). This includes primary ruby and sapphire deposits in the gemstone belt of East Africa, Madagascar, India, and Sri Lanka that are linked to collisional processes between eastern and western Gondwana (figure 2) during Pan-African tectonic …
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a) UID CdO film grown on a layer of Pt on a Si substrate. b) Layers of polymer and photoresist blanket deposited on UID CdO. c) Layered structure with photoresist …
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The removal of Eriochrome Black T (EBT) from aqueous solutions by Al2O3 nanoparticles has been investigated as a function of contact time, initial EBT concentration, and temperature. The experimental design method generated optimum conditions as tc = 40 min, 55 mg/L, and T = 298 K. The maximum adsorption yield was …
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The high O concentration at 36.60 atomic % may represent both Ga 2 O 3 thin films and α-Al 2 O 3 substrates. Hence, the values of O concentration are inaccurate and not comparable to that of Ga …
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completely. Concentration of gallium precursor was fixed at 0.05mol/L. Concentrations of tin precursor were changed as 0, 5:0 10, and5 2:0 10 mol/L. The preliminary4 experiments revealed that carrier gases containing oxygen made a reaction with tin(II) chloride dihydrate and produced precipitations in the solution, which would cause a harmful
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The lowest thin film resistivity is determined to be approximately 3.3 × 10 −4 Ω cm, which is sufficiently low for a transparent conductive oxide. The carrier concentration and mobility exhibited by the rh-ITO films were consistent with those of typical single-crystalline ITO films, which exhibited the most stable phase.
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Following the previous achievement of highly crystalline α-Ga2O3 thin films on c-plane sapphire, the growth of corundum-structured α-(AlxGa1-x)2O3 was examined aiming at the future application ...
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